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IPU135N08N3 G

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IPU135N08N3 G

Product Category : MOSFET

Vgs (Max) : ±20V

Current - Continuous Drain (Id) @ 25°C : 50A (Tc)

FET Type : N-Channel

Mounting Type : Through Hole

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Manufacturer : Infineon Technologies

Minimum Quantity : 1500

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Operating Temperature : -55°C ~ 175°C (TJ)

FET Feature : -

Series : OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds : 1730pF @ 40V

Supplier Device Package : PG-TO251-3

Part Status : Obsolete

Packaging : Tube

Rds On (Max) @ Id, Vgs : 13.5 mOhm @ 50A, 10V

Power Dissipation (Max) : 79W (Tc)

Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

Technology : MOSFET (Metal Oxide)

Vgs(th) (Max) @ Id : 3.5V @ 33µA

Drain to Source Voltage (Vdss) : 80V

Description : MOSFET N-CH 80V 50A TO251-3

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The IPU135N08N3 G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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